Cu ECMP 공정에서 전해액이 연마거동에 미치는 영향

권태영; 김인권; 김태곤; 조병권; 박진구; Tae-Young Kwon; In-Kwon Kim; Tae-Gon Kim; Byung-Gwun Cho; Jin-Goo Park

Korean Journal of Materials Research, Vol.18, No.6, 334-338, June, 2008

DOI10.3740/MRSK.2008.18.6.334 Export Citation

Cu ECMP 공정에서 전해액이 연마거동에 미치는 영향

The Effect of Electrolytes on Polshing Behavior in Cu ECMP

권태영, 김인권, 김태곤, 조병권¹, 박진구 ^†

한양대학교 금속재료공학과
¹한양대학교 바이오나노공학과

Tae-Young Kwon, In-Kwon Kim, Tae-Gon Kim, Byung-Gwun Cho¹, and Jin-Goo Park^†

Department of Materials Engineering, Hanyang University, Sa-1-Dong, Gyeonggi-Do, Ansan, South Korea, 426-791
¹Department of Bio-nano Technology, Hanyang University, Sa-1-Dong, Gyeonggi-Do, Ansan, South Korea, 426-791

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The purpose of this study is to characterize various electrolytes on electrochemical mechanical planarization (ECMP). The ECMP system was modified from conventional CMP system to measure the potentiodynamic curve and removal rate of Cu. The potentiodynamic curves were measured in static and dynamic states in investigated electrolytes using a potentiostat for the evaluation of the polishing behavior on ECMP. KOH (alkaline) and NaNO3 (salt) were selected as electrolytes which have high conductivity. In static and dynamic states, the corrosion potential decreased and the corrosion current increased as a function of the electrolyte concentration. But, the electrochemical reaction was prevented by mechanical polishing effect in the dynamic state. The static etch and removal rate were measured as functions of concentration and applied voltage. When NaNO3 was used, the dissolution was much faster than that of KOH. It was concluded that the removal rate was strongly depended on electrochemical dissolution. The removal rate increased up to 350 nm/min in NaNO3 based electrolyte.

Keywords:Cu ECMP;potentiodynamic curve;KOH;NaNO3;electrochemical reaction

[References]

Chang SC, Shieh JM, Huang CC, Dai BT, Feng MS, Jpn. J. Appl. Phys., 41, 7332 (2002)
Economikos L, Wang X, Sakamoto X, Ong P, Naujok M, Knarr R, Chen L, Moon Y, Neo S, Salfelder J, Duboust A, Manens A, Lu W, Shrauti S, Liu F, Tsai S, Swart W, Proceedings of the IEEE 2004 International Interconnect Technology Conference, p.233 (2004). (2004)
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Goonetilleke PC, Roy D, Materials Chemistry and Physics, 94(2), 388 (2005)
Lee SJ, Lee YM, Du MF, J. Master. Process. Tech., 140(1), 280 (2003)
Oh YJ, Park GS, Chung CH, J. Electrochem. Soc., 153(7), G617 (2006)
Becerra JG, Salvarezza RC, Arvia AJ, Electrochimica Acta, 33(5), 613 (1988)

[Related Articles]

[1] Chang SC, Shieh JM, Huang CC, Dai BT, Feng MS, Jpn. J. Appl. Phys., 41, 7332 (2002)

[2] Economikos L, Wang X, Sakamoto X, Ong P, Naujok M, Knarr R, Chen L, Moon Y, Neo S, Salfelder J, Duboust A, Manens A, Lu W, Shrauti S, Liu F, Tsai S, Swart W, Proceedings of the IEEE 2004 International Interconnect Technology Conference, p.233 (2004). (2004)

[3] Pallinti J, Lakshminarayanan S, Barth W, Wright P, Lu M, Reder S, Kwak L, Catabay W, Wang D, Ho F, Proceedings of the IEEE 2003 International Interconnect Technology Conference, p.83 (2003). (2003)

[4] Goonetilleke PC, Roy D, Materials Chemistry and Physics, 94(2), 388 (2005)

[5] Lee SJ, Lee YM, Du MF, J. Master. Process. Tech., 140(1), 280 (2003)

[6] Oh YJ, Park GS, Chung CH, J. Electrochem. Soc., 153(7), G617 (2006)

[7] Becerra JG, Salvarezza RC, Arvia AJ, Electrochimica Acta, 33(5), 613 (1988)