세정액에 따른 실리콘 웨이퍼의 Cu 및 Fe 불순물 제거

김인정; 배소익; In-Jung Kim; So-Ik Bae

Korean Journal of Materials Research, Vol.16, No.2, 80-84, February, 2006

DOI10.3740/MRSK.2006.16.2.080 Export Citation

세정액에 따른 실리콘 웨이퍼의 Cu 및 Fe 불순물 제거

Removal of Cu and Fe Impurities on Silicon Wafers from Cleaning Solutions

김인정^†, 배소익

(주)실트론 기술연구소 Leading Project Team

In-Jung Kim^†, and So-Ik Bae

Leading Project Team, R&D Center, Siltron Inc., 283, Imsoo-dong, Gumi, Gyeong-Buk, 730-725, Korea

E-mail:

The removal efficiency of Cu and Fe contaminants on the silicon wafer surface was examined to investigate the effect of cleaning solutions on the behavior of metallic impurities. Silicon wafers were intentionally contaminated with Cu and Fe solutions by spin coating and cleaned in different types of cleaning solutions based on NH 4 OH/H 2 O 2 /H 2 O(SC1),H 2 O 2 /HCl/H 2 O (SC2), and/or HCl/ H 2 O (m-SC2) mixtures. The concentration of metallic contaminants on the silicon wafer surface before and after cleaning was analyzed by vapor phase decomposition/inductively coupled plasma-mass spectrometry (VPD/ICP-MS). Cu ions were effectively removed both in alkali (SC1) and in acid (SC2) based solutions. When H 2 O 2 was not added to SC2 solution like m-SC2, the removal efficiency of Cu impurities was decreased drastically. The efficiency of Cu ions in SC1 was not changed by increasing cleaning temperature. Fe ions were soluble only in acid solution like SC2 or m-SC2 solution. The removal efficiencies of Fe ions in acid solutions were enhanced by increasing cleaning temperature. It is found that the behavior of metallic contaminants as Cu and Fe from silicon surfaces in cleaning solutions could be explained in terms of Pourbaix diagram.

Keywords:cleaning solution;metal;contamination;silicon wafer;Pourbaix diagram

[References]

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[2] Gould G, Irene EA, J. Electrochem. Soc., 134, 1031 (1987)

[3] Kern W, Puotinen DA, RCA Rev., 31, 187 (1970)

[4] Aoki H, Yamasski S, Shiramizu Y, Aoto N, Imaoks T, Extended Abstract of the 1995 International Conference on Solid State vice and Materials, 252 (1995)

[5] Hattori T, Solid State Tech., 42, 73 (1999)

[6] Morita H, Ida J, Ii T, Ohmi T, Proceeding of the IEEE International Symposium on Semiconductor Manufacturing Conference, 453 (1999)

[7] Ohmi T, Irnaoka T, Kezuka T, Takano J, Kogure M, J. Electrochem. Soc., 140, 811 (1993)

[8] Radzimski Z, IEEE Trans. Electron Dev., ED-29, 1336 (1982)

[9] Mouche L, Tardif F, Derrien J, J. Electrochem. Soc., 141(6), 1684 (1994)

[10] Montgomery JS, Bamak JP, Bayoumi A, Hanser JR, Nemanich RJ, Electrochem. Soc. Symp. Proc., 94, 296 (1994)

[11] Lim JM, Jeon BY, Lee C, Mater. Chem. Phys., 70(2), 129 (2001)

[12] Aomi H, Derouin F, Ohmi T, Mat. Res. Soc. Symp. Proc., 315, 333 (1993)

[13] Kern W, Handbook of Semiconductor Wafer Cleaning Technology, Noyes Publications, New Jersey (1992) (1992)

[14] Kern W, The Evolulion of Silicon Wafer Cleaning Technology, J. Electrochem. Soc., 137, 1887 (1990)

[15] Hourai M, Naridomi T, Oka Y, Murakami K, Sumita S, Fujino N, Shirawa T, Jpn. J. Appl. Phys, 12, L2361 (1988)

[16] Marcel Pourbaix, 'Atlas of Electrochemical Equilibriai in Aqueous Solutions', NACE International Cebelcor, 307 (1974) (1974)