차세대 공정에 적용 가능한 Cu(B)/Ti/SiO 2 /Si 구조 연구

이섭; 이재갑; Seob Lee; Jaegab Lee

Korean Journal of Materials Research, Vol.14, No.4, 246-250, April, 2004

DOI10.3740/MRSK.2004.14.4.246 Export Citation

차세대 공정에 적용 가능한 Cu(B)/Ti/SiO 2 /Si 구조 연구

A Study on Cu(B)/Ti/SiO 2 /Si Structure for Application to Advanced Manufacturing Process

이섭, 이재갑 ^†

국민대학교 신소재공학부

Seob Lee, and Jaegab Lee^†

School of Advanced Materials Engineering, Kookmin University, 861-1, Jeongneung-Dong, Chongnung-dong, Songbuk-gu, Seoul, 136-702, Korea

E-mail:

We have investigated the effects of boron added to Cu film on the Cu-Ti reaction and microstructural evolution of Cu(B) alloy film during annealing of Cu(B)/Ti/ SiO 2 /Si structure. The result were compared with those of Cu(B)/ SiO 2 structure to identify the effects of Ti glue layers on the Boron behavior and the result grain growth of Cu(B) alloy. The vacuum annealing of Cu(B)/Ti/ SiO 2 multilayer structure allowed the diffusion of B to the Ti surface and forming TiB 2 compounds at the interface. The formed TiB 2 can act as a excellent diffusion barrier against Cu-Ti interdiffusion up to 800 ? C . Also, the resistivity was decreased to 2.3μ Ω -cm after annealing at 800 ? C . In addition, the presence of Ti underlayer promoted the growth Cu(l11)-oriented grains and allowed for normal growth of Cu(B) film. This is in contrast with abnormal growth of randomly oriented Cu grains occurring in Cu(B)/ SiO 2 upon annealing. The Cu(B)/Ti/ SiO 2 structure can be implemented as an advanced metallization because it exhibits the low resistivity, high thermal stability and excellent diffusion barrier property.

Keywords:Cu;boron;TiB 2

[References]

Muraka SP, Solid State Technol., 39, 83 (1996)
Jeng SP, Hanemann RH, Chang MC, Mater. Res. Soc. Symp. Proc., 337, 25 (1994)
Awaya N, Arita Y, J. Electron. Mater., 21, 959 (1992)
Jain A, Kodas TT, Jairath R, Hampdensmith MJ, J. Vac. Sci. Technol. B, 11(6), 2107 (1993)
Lin J, Chen M, Jpn. J. Appl. Phys., 1, 38 (1999)
Muraka SP, Hymes S, Solid State Mater. Sci, 20, 87 (1995)
Liu R, Pai CS, Martinez E, Solid State Electron., 43, 1003 (1999)
Lin XW, Pramanlk D, Solid State Technol., 41, 63 (1998)
Lanford WA, Ding PJ, Wang W, Hymes S, Murarka SP, Mater. Chem. Phys., 41, 192 (1995)
Ding PJ, Lanford WA, Hymes S, Murarka SP, Appl. Phys. Lett., 64, 2897 (1994)
Lanford WA, Ding PJ, Wang W, Hymes S, Muraka SP, Thin Solid Films, 262(1-2), 234 (1995)
Choi CS, Xing GC, Ruggles GA, Osburn CM, J. Appl. Phys., 69, 7853 (1991)
Zhang SL, Harper JME, D'heurle FM, J. Electron. Mater., 30, L1 (2001)
Barmak K, Lucadamo GA, Cabral C, Jr, Lavoie C, Harper JME, J. Appl. Phys., 87, 2204 (2000)

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[1] Muraka SP, Solid State Technol., 39, 83 (1996)

[2] Jeng SP, Hanemann RH, Chang MC, Mater. Res. Soc. Symp. Proc., 337, 25 (1994)

[3] Awaya N, Arita Y, J. Electron. Mater., 21, 959 (1992)

[4] Jain A, Kodas TT, Jairath R, Hampdensmith MJ, J. Vac. Sci. Technol. B, 11(6), 2107 (1993)

[5] Lin J, Chen M, Jpn. J. Appl. Phys., 1, 38 (1999)

[6] Muraka SP, Hymes S, Solid State Mater. Sci, 20, 87 (1995)

[7] Liu R, Pai CS, Martinez E, Solid State Electron., 43, 1003 (1999)

[8] Lin XW, Pramanlk D, Solid State Technol., 41, 63 (1998)

[9] Lanford WA, Ding PJ, Wang W, Hymes S, Murarka SP, Mater. Chem. Phys., 41, 192 (1995)

[10] Ding PJ, Lanford WA, Hymes S, Murarka SP, Appl. Phys. Lett., 64, 2897 (1994)

[11] Lanford WA, Ding PJ, Wang W, Hymes S, Muraka SP, Thin Solid Films, 262(1-2), 234 (1995)

[12] Choi CS, Xing GC, Ruggles GA, Osburn CM, J. Appl. Phys., 69, 7853 (1991)

[13] Zhang SL, Harper JME, D'heurle FM, J. Electron. Mater., 30, L1 (2001)

[14] Barmak K, Lucadamo GA, Cabral C, Jr, Lavoie C, Harper JME, J. Appl. Phys., 87, 2204 (2000)