고농도로 탄소 도핑된 높은 밀러 지수 GaAs

손창식; Chang-Sik Son

Korean Journal of Materials Research, Vol.13, No.11, 717-720, November, 2003

DOI10.3740/MRSK.2003.13.11.717 Export Citation

고농도로 탄소 도핑된 높은 밀러 지수 GaAs

Heavy Carbon Incorporation into High-Index GaAs

손창식^†

신라대학교 공과대학 광전자공학과

Chang-Sik Son^†

Department of Photonics, Silla University, Busan 617-736, Korea

E-mail:

Heavily -typed ( ) GaAs epilayers have been grown on high-index GaAs substrates with various crystallographic orientations from (100) to (111)A by a low-pressure metalorganic chemical vapor deposition. Carbon (C) tetrabromide (CBr) was used as a C source. At moderate growth temperatures and high V/III ratios, the hole concentration of C-doped GaAs epilayers shows the crystallographic orientation dependence. The bonding strength of As sites on a growing surface plays an important role in the C incorporation into the high-index GaAs substrates.

Keywords:carbon;GaAs;hole;high-index;MOCVD;van-der pauw Hall

[References]

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[1] Nelson AW, Westbrook LD, J. Crystal Growth, 68, 102 (1984)

[2] Stockman SA, Hfler GE, Baillargeon JN, Hsieh KC, Cheong KY, Stillman GE, J. Appl. Phys., 72, 981 (1992)

[3] Ashizawa Y, Noda T, Morizuka K, Asaka M, Nelson AW, Obara M, J. Crystal Growth, 107, 903 (1991)

[4] Moriaty GR, Murtagh M, Cherkaoui K, Gouez G, Kelly PV, Crean GM, Bland SW, Mater. Sci. Eng. B, 56, 284 (2001)

[5] Lee HS, Han WY, Lu Y, Cole MW, Lareau RT, Casas L, Thompson RJ, DeAnni A, Jones KA, Yang LW, Mat. Res. Soc. Sym. Proc., 260, 467 (1992)

[6] Abernathy CR, Pearton SJ, Ren F, Hobson WS, Fullowan TR, Katz A, Jordan AS, Kovalchick J, J. Crystal Growth, 105, 375 (1990)

[7] Guo LQ, Konagai M, Jpn. J. Appl. Phys., 35, L195 (1996)

[8] Lum RM, Klingert JK, Kisker DW, Abys SM, Stevie FA, J. Crystal Growth, 93, 120 (1988)

[9] Anayama C, Sekiguchi H, Kondo M, Sudo H, Fukushima T, Furuya A, Tanahashi T, Appl. Phys. Lett., 63, 1736 (1993)

[10] Bhat R, Zah CE, Caneau C, Koza MA, Menocal SG, Schwarz SA, Favire FJ, Appl. Phys. Lett., 56, 1691 (1990)

[11] Li NY, Dong HK, Tu CW, Geva M, Crystal Growth, 150, 246 (1995)

[12] Buchan NI, Kuech TF, Scilla GJ, Cardone F, J. Crystal Growth, 110, 405 (1991)

[13] Kurpas P, Richter E, Gutsche D, Brunner F, Weyers M, Inst. Phys. Conf. Ser., 145, 177 (1995)

[14] Son CS, Kim SI, Kim Y, Park YK, Min SK, Choi IH, J. Appl. Phys., 82, 1205 (1997)

[15] Kondo M, Anayama C, Okada N, Sekiguchi H, Domen K, Tanahashi T, J. Appl. Phys., 76, 914 (1994)