MOCVD로 제조한 SnO 2 박막의 표면반응 특성

박경희; 서용진; 홍광준; 이우선; 박진성; Kyung Hee Park; Yong Jin Seo; Kwang Jun Hong; Woo Sun Lee; Jin Seong Park

Korean Journal of Materials Research, Vol.13, No.5, 309-312, May, 2003

DOI10.3740/MRSK.2003.13.5.309 Export Citation

MOCVD로 제조한 SnO 2 박막의 표면반응 특성

Characteristics of Surface Reaction of SnO 2 Thin Films Prepared by MOCVD

박경희^†, 서용진¹, 홍광준², 이우선³, 박진성⁴

조선대학교 에너지자원신기술연구소
¹대불대학교 전기공학과
²조선대학교 물리학과
³조선대학교 전기공학과
⁴조선대학교 재료공학과

Kyung Hee Park^†, Yong Jin Seo¹, Kwang Jun Hong², Woo Sun Lee³, and Jin Seong Park⁴

Research Institute of Energy Resources Technology, Chosun University, Gwangju 501-759, Korea
¹Department of Electrical Engineering, Daebul University, Yeongam-gun 526-702, Korea
²Department of Physics, Chosun University, Gwangju 501-759, Korea
³Department of Electrical Engineering, Chosun University, Gwangju 501-759, Korea
⁴Department of Material Engineering, Chosun University, Gwangju 501-759, Korea

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Tin dioxide( S nO2 ) thin films were deposited on alumina substrate by metal-organic chemical vapor deposition (MOCVD) as a function of temperature and time. Thin films were fabricated from di-n-butyltin diacetate as a precursor and oxygen as an oxidation. The microstructure of deposited films was characterized by X-ray diffraction and field emission scanning electron microscopy(FE-SEM). The thickness was linearly increased with deposition time and SnO 2 structure was found from 375 ? C for the deposition time of 32 min. The maximum sensitivity to 500ppm CO gas was observed for the specimens deposited at 375 ? C for 2 min at the operating temperature of 350 ? C . Gas sensitivity to CO increased with decreasing the film thickness. The sensing properties of response time, recovery and sensitivity of CO were changed with variations of substrate temperature and time.

Keywords:Thin films;Tin oxide;MOCVD;Surface reaction

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[1] Bruneaux J, Cachet H, Froment M, Messad A, Electrochim. Acta, 39(8-9), 1251 (1994)

[2] Lee SC, Lee JH, Oh TS, Kim YH, Sol. Energy Mater. Sol. Cells, 75(3-4), 481 (2003)

[3] Sears WM, Gee MA, Thin Solid Films, 165, 265 (1988)

[4] Horrillo MC, Serrini P, Santos J, Manes L, Sens. Actuators B, 45, 193 (1997)

[5] Lee SW, Tsai PP, Chen H, Sens. Actuators B, 41, 55 (1997)

[6] Sberveglieri G, Faglia G, Groppelli S, Nelli P, Transducers '91, 6th Int'l Conf. on Solid-State Sensors and Actuators (San Francisco, CA, June, 1991) p. 165 (1991)

[7] Kane J, Schweizer HP, Kern W, J. Electrochem. Soc., 122, 1144 (1975)

[8] Shoji K, Isao Y, Kenji M, Masayuki O, Solid State Ionics, 141-142, 463 (2001)

[9] Windischman H, Mark P, J. Electrochem. Soc., 126(4), 627 (1979)