In this paper we report a novel process to fabricate high-ohmic resistors using pure boron (PureB) depositions to create a p-type conductive layer on n-type silicon substrate. Sheet resistance values in the 100 k Omega/square range are achieved using a reproducible and IC compatible process. The resistors made in this material are linear, bias-independent for the voltage ranges as high as 100 V, low temperature coefficients of a few hundred ppm/degrees C and less than 1% tolerances. As an application, these resistors are integrated in the silicon drift detectors fabrication flow as voltage divider for the drift of electrons, successfully. (C) 2014 Elsevier Ltd. All rights reserved.