Pt/ YMnO 3   / Y 2   O 3   /Si(MFIS) 구조의 특성에 미치는 Y 2 O 3   층의 영

양정환; 신웅철; 최규정; 최영심; 윤순길; Jung-Hwan Yang; Woong-Chul Shin; Kyu-Jeong Choi; Young-Sim Choi; Soon-Gil Yoon

Korean Journal of Materials Research, Vol.10, No.4, 270-275, April, 2000

Export Citation

Pt/ YMnO 3 / Y 2 O 3 /Si(MFIS) 구조의 특성에 미치는 Y 2 O 3 층의 영

Effect of Y 2 O 3 Buffer Layer on the Characteristics of Pt/ YMnO 3 / Y 2 O 3 /Si(MFIS) Structure

양정환, 신웅철, 최규정, 최영심, 윤순길

충남대학교 공과대학 재료공학과

Jung-Hwan Yang, Woong-Chul Shin, Kyu-Jeong Choi, Young-Sim Choi, and Soon-Gil Yoon

Department of Materials Engineering, Chungnam National University, Daeduk Science Town, Daejeon 305-764, Korea

초록

etal/ferroelectric/insulator/semiconductor(MFIS)-Field Effect Transistor을 위한 Pt/YMnO 3 /Y 2 O 3 /Si 구조를 제조하여 MFIS 구조의 특성에 미치는 Y 2 O 3 박막의 영향을 고찰하였다. PLD법을 이용하여 p=type Si(111) 기판 위에 증착시킨 Y 2 O 3 박막은 증착온도와 관계없이 (111)방향으로의 우선배향성을 갖고 결정화 되었다. 실리콘 위에 바로 MOCVD법에 의해 강유전체 YMnO 3 박막을 증착시킨 경우 실리콘과의 계면에서 Mn이 부족한 층이 형성되지만 Y 2 O 3 가 실리콘과 YMnO 3 사이에 삽입된 경우는 Y 2 O 3 바로 위에서부터 화학양론비에 일치하는 양질의 YMnO 3 박막을 얻을 수 있었다. 85 0 ? C , 100mtorr의 진공분위기에서 열처리한 YMnO 3 박막은 Y 2 O 3 가 삽입된 경우 memory window 값이 Y 2 O 3 가 삽입되지 않은 경우보다 더 큰 값을 보였으며 5V에서 1.3V의 값을 보였다.

The Pt/YMnO 3 /Y 2 O 3 /Si structure for metal/ferroelectric/insulator/semiconductor(MFIS)-FET was fabricated and effect of Y 2 O 3 layer on the properties of MFIS structure was investigated. The Y 2 O 3 thin films on p-type Si(111) substrate deposited by Pulsed Laser Deposition were crystallized along (111) orientation irrespective of the deposition temperatures. Ferroelectric YMnO 3 thin films deposited directly on p-type Si (111) by MOCVD resulted in Mn deficient layer between Si and YMnO 3 . However, YMnO 3 thin films having good quality and stoichiometric composition can be obtained by adopting Y 2 O 3 buffer layer. The memory window of the Y 2 O 3 thin films with YMnO 3 film is greater than that of the YMnO 3 thin films without Y 2 O 3 film after the annealing at 85 0 ? C in vacuum ambient(100mtorr). The memory window is 1.3V at an applied voltage of 5V.

Keywords:MFIS-FET(Metal/Ferroelectric/Insulator/Semiconductor-Field Effect Transistor);Ferroelectric;PLD(pulsed laser deposition);MOCV(metalorganic chemical vapor deposition)

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[5] Kim S, Hishita S, Kang Y, Baik S, J. Appl. Phys., 78, 2801 (1995)

[6] Lim MH, Kalkur TS, Integ. Ferroelect, 17, 433 (1997)

[7] Wu YM, Lo JT, Jpn. J. Appl. Phys., 37(9A), 4943 (1998)

[8] Fukumoto H, Imura T, Osaka Y, Appl. Phys. Lett., 51, 919 (1989)

[9] Park BE, Shouriki S, Tokumitsu E, Ishiwara H, Jpn. J. Appl. Phys., 37, 5145 (1993)

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[11] Bertaut EF, Forrat F, Fang PH, C. Rend., 256, 1958 (1963)

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[14] Fujimura N, Ishida T, Yoshimura T, Ito T, Appl. Phys. Lett., 69(7), 1011 (1996)