SiNx/Si 구조를 이용한 SiC 박막성장

김광철; 박찬일; 남기석; 임기영; Kwang Chul Kim; Chan Il Park; Kee Suk Nahm; Kee Young Lim

Korean Journal of Materials Research, Vol.10, No.4, 276-281, April, 2000

Export Citation

SiNx/Si 구조를 이용한 SiC 박막성장

Growth of SiC film on SiNx/Si Structure

김광철¹, 박찬일¹, 남기석^{1, 2}, 임기영^{1, 3}

¹전북대학교 반도체과학기술학과
²전북대학교 화학공학부
³전북대학교 과학기술학부

Kwang Chul Kim¹, Chan Il Park¹, Kee Suk Nahm^{1, 2}, and Kee Young Lim^{1, 3}

¹Department of Semiconductor Science & Technolgoy, Chonbuk National University, Chongju, 561-756, Republic of Korea
²School of Chemical Engineering & Technology, Chonbuk National University, Chongju, 561-756, Republic of Korea
³School of Science & Technology, Chonbuk National University, Chongju, 561-756, Republic of Korea

초록

Si(111) 표면을 NH 3 분위기에서 실리콘질화물(SiNx)로 변형시킨 후 탄화규소(silicon carbide, SiC) 박막을 성장하였다. 질화시간이 증가함에 따라 SiC 박막 두께가 감소함을 관찰하였다. 또한 성장변수에 따라 SiC/Si 계면에서 결정결함인 틈새를 없앨 수 있었다. 100nm, 300nm, 500nm의 SiNx/Si 기판 위에 SiC 박막을 성장시켰다. 성장된 SiC 박막들은 모두 [111]면을 따라 성장되었고, SiC 결정들이 원주형 낟알로 성장되었다. SiC/SiNx 계면에서 void를 관찰할 수 없었다. 이러한 실험 결과는 SOI 구조의 산화규소를 SiNx로 대체함으로써 SiC 소자 제작에 응용될 수 있는 방향을 제시하고 있다.

licon carbide(SiC) films were grown on modified Si(111) surface with a SiNx in the NH 3 surrounding. Thickness of SiC films was decreased with increasing of the nitridation time. Also, voids having crystal defects were removed at interface of SiC/Si according to growth parameters. SiC films were grown on SiNx/Si substrate of 100, 300 and 500nm thickness. SiC films were deposited along [111] direction and columnar grains of SiC crystal. The void-free film was observed in the interface of SiC/SiNx. This result suggests that fabrication of SiC devices are applied to SiNx replacing silicon oxide in SOI structure.

Keywords:Silican carbide(SiC);X-ray diffraction(XRD);Transmission electron microscopy(TEM);Voids

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[1] Weiss BL, Properties of Silicon Carbide/ INSPEC, 1995 (1995)

[2] Davis RF, Kelner G, Shur M, Palmour JW, Edmond JA, Proc. IEEE79, 677 (1991)

[3] Nishino S, Suhara H, Ono H, Matsunami H, J. Appl. Phys., 61, 4889 (1987)

[4] Liaw P, Davis RF, J. Electrochem. Soc., 132(3), 642 (1985)

[5] Bluet JM, Falkovsky LA, Planes N, Camassel J, Mat. Sci. Forum, 264-268, 395 (1998)

[6] Cioccio LD, Tiec LL, Letetre F, Jaussaud C, Bruel M, Electronics Lett., 32(12), 1144 (1996)

[7] Tong QY, Gosele U, Yuan C, Steckl AJ, Reiche M, J. Electrochem. Soc., 142(1), 232 (1995)

[8] Seo YH, Nahm KS, Suh EK, Lee HJ, Hwang YG, J. Vac. Sci. Technol. A, 15(4), 2226 (1997)

[9] Murarka SP, Chang CC, Adams AC, J. Phys. Chem., 126, 996 (1979)

[10] Hayafuji Y, Kajiwara K, J. Phys. Chem., 129, 2102 (1982)

[11] Moslehi MM, Saraswat KC, IEE Trans. Electron Devices, ED-32, 106 (1985)

[12] Sobolewsky MA, Helms CR, Appl. Surf. Sci., 30, 210 (1987)

[13] Sun SW, Tobin PJ, Weihmeir JW, Reed E, Surf. Sci., 134, 1779 (1987)

[14] Basa C, Irene EA, J. Vac. Sci. Technol. A, 17(3), 817 (1999)

[15] Baumvol IJ, Stedile FC, Ganem JJ, Rigo S, Trimaille I, J. Electrochem. Soc., 142(4), 1205 (1995)

[16] Kim KC, Nahm KS, Suh EK, Hwang YG, J. Cryst. Growth, 197, 841 (1999)

[17] Li JP, Steckl AJ, J. Electrochem. Soc., 142(2), 634 (1995)

[18] Hattori Y, Suzuki T, Murata T, Yabumi T, Yasuda K, Saji M, J. Cryst. Growth, 115, 607 (1991)

[19] Ohshita Y, J. Cryst. Growth, 147, 111 (1995)

[20] Chiu CC, Desu SB, J. Mater. Res., 9, 104 (1994)

[21] Tit N, Dharma-Wardana MWC, J. Appl. Phys., 86(1), 387 (1999)

[22] Kingetsu T, Takehara M, Jpn. J. Appl. Phys., 37, 4974 (1998)