On-axis 스퍼터링과 FTS 공정으로 증착한 ZTO 박막트랜지스터의 특성

이세희; 윤순길; Se-Hee Lee; Soon-Gil Yoon

Korean Journal of Materials Research, Vol.26, No.12, 676-680, December, 2016

DOI10.3740/MRSK.2016.26.12.676 Export Citation

On-axis 스퍼터링과 FTS 공정으로 증착한 ZTO 박막트랜지스터의 특성

Characterization of ZTO Thin Films Transistor Deposited by On-axis Sputtering and Facing Target Sputtering(FTS)

이세희, 윤순길^†

충남대학교 신소재공학과

Se-Hee Lee, and Soon-Gil Yoon^†

Department of Materials Science and Engineering, Chungnam National University, Daeduk Science Town, 34134, Daejeon, Republic of Korea

E-mail:

We have investigated the properties of thin film transistors(TFT) fabricated using zinc tin oxide(ZTO) thin films deposited via on-axis sputtering and FTS methods. ZTO thin films deposited by FTS showed lower root-mean-square(RMS) roughness and more uniformity than those deposited via on-axis sputtering. We observed enhanced electrical properties of ZTO TFT deposited via FTS. The ZTO films were deposited at room temperature via on-axis sputtering and FTS. The as-deposited ZTO films were annealed at 400 °C. The TFT using the ZTO films deposited via FTS process exhibited a high mobility of 12.91 cm2/V.s, a low swing of 0.80 V/decade, Vth of 5.78 V, and a high Ion/off ratio of 2.52 × 106.

Keywords:zinc tin oxide;thin film transistor;facing target sputtering

[References]

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Hossain FM, Nishii J, Takagi S, Ohtomo A, Fukumura T, J. Appl. Phys., 94, 7768 (2003)
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Kim YJ, Yang BS, Oh S, Han SJ, Lee HW, Heo J, Jeong JK, Kim HJ, ACS Appl. Mater. Interfaces, 5, 3255 (2013)
Lee JM, Choi BH, Ji MJ, Park JH, Kwon JH, Ju BK, Semicond. Sci. Technol., 24, 055008 (2009)
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[1] Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H, Nature, 432, 488 (2004)

[2] Seo SJ, Choi CG, Hwang YH, Bae BS, J. Phys. D-Appl. Phys., 42, 035106 (2009)

[3] Barquinha P, Vila AM, Goncalves G, Pereira L, Martins R, Morante JR, Fortunate E, IEEE Trans. Electron Devices, 55, 954 (2008)

[4] Lee JS, Kim YJ, Lee YU, Kim YH, Kwon JY, Han MK, Jpn. J. Appl. Phys., 51, 061101 (2012)

[5] Chiang HQ, Wager JF, Hoffman RL, Jeong J, Keszler DA, Appl. Phys. Lett., 86, 013503 (2005)

[6] Ahn BD, Choi DW, Choi C, Park JS, Appl. Phys. Lett., 105, 092103 (2014)

[7] Suresh A, Wellenius P, Dhawan A, Muth J, Appl. Phys. Lett., 90, 123512 (2007)

[8] Choi HJ, Jung HJ, Hur SG, Yoon SG, J. KIEEME, 24, 126 (2011)

[9] Hoffman RL, Solid-State Electron., 50(5), 784 (2006)

[10] Choi HJ, Yoon SG, Lee JH, Lee JY, ECS J. Solid State Sci. Technol., 1, Q106 (2012)

[11] Hossain FM, Nishii J, Takagi S, Ohtomo A, Fukumura T, J. Appl. Phys., 94, 7768 (2003)

[12] Choi YY, Kang SJ, Kim HK, Curr. Appl. Phys., 12, S104 (2012)

[13] Kim YJ, Yang BS, Oh S, Han SJ, Lee HW, Heo J, Jeong JK, Kim HJ, ACS Appl. Mater. Interfaces, 5, 3255 (2013)

[14] Lee JM, Choi BH, Ji MJ, Park JH, Kwon JH, Ju BK, Semicond. Sci. Technol., 24, 055008 (2009)

[15] Jeong Y, Song K, Woo K, Jun T, Jung Y, Moon J, Korean J. Mater. Res., 20(8), 401 (2010)

[16] Martin S, Chiang CS, Nahm JY, Li T, Kanicki J, Ugai Y, Jpn. J. Appl. Phys., 40, 530 (2001)