Vanadium (V) doped Co0.9Mn0.1Te (CdMnTe:V) crystals were grown with a nominal Vanadium concentration of 1 x10(17)atoms/cm(3) from excess 10 at% Te solution that was carried out by the vertical Bridgman method with accelerated crucible rotation technique(ACRT). The as-grown crystals display a high resistance characteristic of 4.123x 10(1)degrees Omega.cm in the wafer cutting from the middle part of the ingot. The infrared microscopy images show that the planar density of Te inclusions/precipitates in the crystals is between 1.4x10(3) to 6x10(5) cm(-2). The measured highest IR transmission in the middle part of the ingot of 63% is near the theoretical limit of 65%. Moreover, the PL spectra show a sharp (D degrees, X) peak, a flat Deompi, peak and a low DAP peak. The (D degrees, X) peak has a FWHM of 4.36 meV, indicating a high quality of crystallization, while a flat D-complex peak means very low dislocations and defects relative to the vacancies of Cd in the middle part of this ingot. The low DAP peak with a relative intensity of I-DAP/I-(D degrees,(X)) of 0.045 demonstrates low impurity concentration in this crystal.