Effect of post-synthesis annealing on properties of SnS nanospheres and its solar cell performance

Nguyen Tam Nguyen Truong; Ha Hai Thi Hoang; Thanh Kieu Trinh; Viet Thanh Hau Pham; Ryan Patrick Smith; Chinho Park

Korean Journal of Chemical Engineering, Vol.34, No.4, 1208-1213, April, 2017

DOI10.1007/s11814-016-0347-4 Export Citation

Effect of post-synthesis annealing on properties of SnS nanospheres and its solar cell performance

Nguyen Tam Nguyen Truong, Ha Hai Thi Hoang, Thanh Kieu Trinh, Viet Thanh Hau Pham, Ryan Patrick Smith¹, and Chinho Park^†

School of Chemical Engineering, Yeungnam University, 280 Daehak-Ro, Gyeongsan 38541, Korea
¹Department of Physics, California State University - East Bay, Hayward, CA 94542, U.S.A., USA

E-mail:

SnS nanospheres (NSPs) were synthesized, and the effects of thermal annealing on the structural, morphological, chemical compositional and optical properties were examined. As-synthesized SnS NPSs with a mean size of 3-4 nm underwent a solid state morphological transformation by high temperature annealing in a nitrogen environment. Upon annealing, the size of SnS NSP increased to 5-6 nm with enhanced crystallinity. Also, the photoluminescence (PL) of the nitrogen-annealed samples slightly decreased in intensity with accompanying red-shift in spectrum. The power conversion efficiency of the solar cells using a polymer and the SnS NSPs was ~0.71%. These results confirm that the SnS NSPs demonstrate a potential as an inorganic material to be used in organic-inorganic hybrid bulk heterojunction (BHJ) photovoltaic devices.

Keywords:Tin Sulfide;Nanocrystal;Photoactive Layer;Orthorhombic;Bulk Hetero-Junction;Exciton

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[Referenced By]

[1] Hong E, Choi T, Kim JH, Korean J. Chem. Eng., 32(3), 424 (2015)

[2] Peng H, Jiang L, Huang J, Li G, J. Nanopart. Res., 9, 1163 (2007)

[3] Truong NTN, Nguyen TPN, Park C, Inter. J. Photoenergy, ID 146582, 2013 (2013)

[4] Burton L, Wash A, J. Phys. Chem. C, 116, 24262 (2012)

[5] Reddy KTR, Reddy NK, Miles RW, Sol. Energy Mater. Sol. Cells, 90(18-19), 3041 (2006)

[6] Sugiyama M, Murata Y, Shimizu T, Ramya K, Venkataiah C, Sato T, Reddy KTR, Jpn. J. Appl. Phys., 50, 05FH03 (2011)

[7] Yue GH, Peng DL, Yan PX, Wang LS, Wang W, Luo XH, J. Alloy. Compd., 468, 254 (2009)

[8] Reddy KTR, Reddy P, Datta PK, Miles RW, Thin Solid Films, 403, 116 (2002)

[9] Reddy NK, Hahn YB, Devika YB, Sumana HR, Gunasekhar KR, J. Appl. Phys., 101, 093522 (2007)

[10] Pramanik P, Basu PK, Biswas S, Thin Solid Films, 150, 269 (1987)

[11] An CH, Tang KB, Liu XM, Li FQ, Zhou G, Qian YT, J. Cryst. Growth, 252(4), 575 (2003)

[12] Hong SY, Popovitz-Biro R, Prior Y, Tenne R, J. Am. Chem. Soc., 125(34), 10470 (2003)

[13] Liu J, Xue DF, Electrochim. Acta, 56(1), 243 (2010)

[14] Thangaraju B, Kaliannan P, J. Phys. D-Appl. Phys., 33, 1054 (2000)

[15] Ortiz A, Alonso JC, Garcia M, Toriz J, Semicond. Sci. Technol., 11, 243 (1996)

[16] Price LS, Parkin UP, Hardy AME, Clark RJH, Hibbert TG, Molloy KC, Chem. Mater., 11, 1792 (1999)

[17] Oda Y, Shen H, Zhao L, Li J, Iwamoto M, Lin H, Sci. Technol. Adv. Mater., 15, 035006 (2014)

[18] Sohila S, Rajalakshmi M, Chosh C, Arora AK, Muthamizhchelvan C, J. Alloy. Compd., 509, 5843 (2011)

[19] Sohila S, Rajalakshmi M, Muthamizhchelvan C, Kalavathi S, Ghosh C, Divakar R, Venkiteswaran CN, Muralidharan NG, Arora AK, Mohandas E, Mater. Lett., 65, 1148 (2011)

[20] Zeferino RS, Pal U, Melendrez R, Flores MB, Adv. Nano Res., 1, 193 (2013)

[21] Brus LE, J. Chem. Phys., 80, 4403 (1984)

[22] Alivisatos AP, J. Phys. Chem., 100(31), 13226 (1996)

[23] Varshni YP, Physica., 34, 149 (1967)

[24] Luo S, Fan J, Liu W, Zhang M, Song Z, Lin C, Wu X, Chu PK, Nanotechnology, 17, 1695 (2006)

[25] Price LS, Parkin IP, Field MN, Hardy AME, Clark RJH, Hibbert TG, Molloy KC, J. Mater. Chem., 10, 527 (2000)

[26] Zhao Y, Zhang Z, Dang H, Liu W, Mater. Sci. Eng. B-Solid State Mater. Adv. Technol., 113, 175 (2004)

[27] Baranovskii SD, Wiemer M, Nenashev AV, Jansson F, Gebhard F, J. Phys. Chem. Lett., 3, 1214 (2012)

[28] Yu G, Gao J, Hummelen JC, Wudl F, Heeger AJ, Science, 270(5243), 1789 (1995)

[29] Lokteva I, Radychev N, Witt F, Borchert H, Parisi J, Olesiak JK, J. Phys. Chem., 114, 12784 (2010)

[30] Shaw PE, Ruseckas A, Samuel IDW, Adv. Mater., 20(18), 3516 (2008)