Journal of the Electrochemical Society, Vol.141, No.8, 2220-2222, 1994
A Chemical Etching Solution for the Determination of the Crystallographic Orientation of GaSb by Optical Reflectograms
GaSb ingots were oriented along the low index crystal planes, (111), (110), and (100), using an optical technique. The surfaces etched with an HCl:CuCl solution show very well-defined figures, revealing the high symmetry of the surface orientations. The reflectograms obtained from these surfaces allow the precise orientation of GaSb crystals, and they can be used to distinguish between the (111)A and (111)B faces.