We report an increase in conductivity of As-implanted layers achieved by rapid thermal activation of As at temperatures below that of junction anneal (900-degrees-C, N2, furnace, performed prior to RTA). This effect is interpreted in terms of residual inactive As reacting with vacancies generated during the heat-treatment. We report an increase in the metal to p+ contact resistance observed as a result of overheating complementary metal oxide semiconductor wafers in the process of TiN formation in a rapid thermal reactor. Changes in the metal to p+ contact resistance with the actual wafer temperature (estimated from the observed deviation of n+ layer conductivity from the nominal values) allows for an estimate of B diffusivity in TiSi2.