This work conveys some modifications made in the process of constant current anodic oxidation of small areas on silicon substrates. The experimental investigation was carried out on anodic oxide films for evaluating interface states quantitatively. Anodic oxide films were formed on comparatively small areas of Si substrates. The constant current mode of anodization was adopted in carrying out oxidation, but the current density, during some of the oxidation processes, was made to go through one or more transitions, either step-up or step-down, before the completion of the processes. This modified mode of constant current anodization, having intermediate step-up or step-down transitions of current density instead of a constant current throughout the oxidation process, was found to be effective in changing the density of interface states, N(it), of the silicon/silicon-oxide system. Among the various stepped transitions in the modified mode of constant current anodization, the step-down transition was found to be optimum in reducing the interface state density.