Titanium nitride (TiN) films were made from tetrakis (diethylamido) titanium (TDEAT) and ammonia by atmospheric pressure chemical vapor deposition (APCVD). Growth rates, stoichiometries, and resistivities were studied as a function of temperature and ammonia : TDEAT ratios. Films were characterized by four-point probe, Rutherford backscattering, forward (elastic) recoil, and x-ray photoelectron spectroscopies. TDEAT was found to have a higher deposition efficiency (>1/3), and slower reaction kinetics than the related Ti(NMe(2))(4) (TDMAT) compound. Higher temperatures and relative NH3 concentrations were necessary to achieve similar growth rates. Though growth was slower than when using TDMAT, films from TDEAT had higher step coverage, lower resistivities (<1000 mu Omega-cm) and were more stable with time. These films are promising candidates for diffusion barriers in 0.25 mu m ULSI device technologies.