A computer-controlled, continuous-flow system was designed for the deposition of compound semiconductor thin films via electrochemical atomic-layer epitaxy (ECALE). ECALE consists of the alternate underpotential deposition (UPD) of two or more elements to form a compound. Solutions containing the precursor for each UPD layer must be delivered to the electrochemical cell in a sequential fashion with intermediate rinses to avoid unwanted hulk codeposition. An effort has been made to optimize various design parameters including electrochemical cell geometry, solution flow rate, electrodeposition potentials, and deposition- and rinse-step duration. Albeit a prototype, our current design constitutes a significant improvement toward the development of a practically viable ECALE deposition system. Some of the features of our design that may be relevant to the eventual practical use of ECALE include the minimization of the time required for each deposition step, minimization of cell volume and consequently the amount of precursors used, and the ability to maintain potential control throughout the process in order to safeguard the integrity of the deposits. Deposition of CdTe at 30 nm/h at a flow rate of 500 mu L/s in a ca. 500 mu L cell is reported. Circular films with 13 mm diam were produced. The thickness of the films was relatively uniform within a 3-3.5 mm radius from the center, getting markedly thinner and less uniform outside that area. Preliminary characterization of the films using energy-dispersive X-ray analysis indicates that stoichiometric growth is achieved. Scanning electron micrographs suggest that the morphology of the films follows the morphology of the underlying vacuum-evaporated gold substrate. Transmission electron micrographs revealed atomically ordered domains in the 10-100 nm size range. Further improvements in the geometry of the electrochemical cell are required to optimize the solution flow inside the cell.