Growth of Layered Semiconductors by Molecular-Beam Epitaxy - Formation and Characterization of GaSe, Mose2, and Phthalocyanine Ultrathin Films on Sulfur-Passivated Gap(111)

Hammond C; Back A; Lawrence M; Nebesny K; Lee P; Schlaf R; Armstrong NR

Journal of Vacuum Science & Technology A, Vol.13, No.3, 1768-1775, 1995

Hammond C, Back A, Lawrence M, Nebesny K, Lee P, Schlaf R, Armstrong NR

Keywords:TRANSITION-METAL DICHALCOGENIDES;HETEROEPITAXIAL GROWTH;SURFACES