Journal of Vacuum Science & Technology B, Vol.13, No.1, 111-117, 1995
Postgrowth of a Si Contact Layer on an Air-Exposed Si1-Xgexsi Single-Quantum-Well Grown by Gas-Source Molecular-Beam Epitaxy, for Use in an Electroluminescent Device
Keywords:CHEMICAL VAPOR-DEPOSITION;ENERGY-ELECTRON-DIFFRACTION;SURFACE RECONSTRUCTIONS;HYDROGEN COVERAGE;PHOTOLUMINESCENCE;SILICON;KINETICS;SI(001);SI2H6