The performance of superficial strained Si/Si1-xGex channel metal-oxide-semiconductor field-effect transistors has been described making use of a two-dimensional drift-diffusion simulator including inversion layer quantization and low-field mobility curves obtained by means of a Monte Carlo simulator. We have reproduced experimental results. In addition, the dependencies of the performance enhancement obtained in these devices on the germanium mole fraction and the drain-source and gate-source voltages are described in depth.