화학공학소재연구정보센터
Journal of Vacuum Science & Technology B, Vol.16, No.3, 1541-1548, 1998
High-speed Si/SiGe technology for next generation wireless system applications
Si/SiGe integrated circuit technology represents a revolutionary opportunity to combine high-performance digital, analog, and rf circuits on a common substrate. The outstanding high-frequency performance of the Si/SiGe devices, combined with the high levels of integration of complementary metal-oxide-semiconductors will contribute to a long-term "paradigm shift" in the architectural partitioning of high-frequency high-performance wireless systems. This article outlines the key future systems applications for the technology.