The facet evolution and growth rate of Si on {hkl} facets were investigated in the temperature range 700-850 degrees C using multilayer structures with thick Si and very thin SiGe markers prepared by selective epitaxial growth using low pressure chemical vappr deposition. The most stable facet, observed at all temperatures, is the high index plane {113}. It is the dominant facet up to the top of all mesas (similar to 1 mu m thick). Even at the corners of square dots steep {113} facets developed [angle of 72 degrees with the (001) plane]. Several facets reported here are observed for the first time. In the [110] zone it is the {119} facet, while in the [100] zone two facets with Miller indices h not equal k not equal l not equal h, the {018} and {0 1 12}, are found. The measured growth rate relationship is R-111 < R-110 < R-113

Keywords:CHEMICAL-VAPOR-DEPOSITION;MOLECULAR-BEAM EPITAXY;EQUILIBRIUM SHAPE;SILICON;SURFACES;SI1-XGEX;SYSTEM;LAYERS;CVD