Relaxed amorphous areas induced in SbxGe1-x films by laser irradiation have been crystallised by isothermal annealing during in-situ observation in a transmission electron microscope. The results show that the nucleation process and the temperatures required to trigger the crystallisation are different for films with compositions on either side of the eutectic (x=0.85). The results suggest that relaxation only leads to a substantial decrease of the free energy in amorphous films with a Sb content higher than that of the eutectic.