Electrophysical Studies of 2D-Hole Spectral Characteristics and Peculiarities of Scattering Mechanisms in Ge Layers of Ge-Ge1-Xsix Heterostructures

Orlov LK; Potapov AV; Rubtsova RA; Arapov Y; Gorodilov N; Shelushinina N; Yang FH; Leotin J; Goiran M

Thin Solid Films, Vol.294, No.1-2, 208-210, 1997

DOI10.1016/S0040-6090(96)09472-2 Export Citation

Electrophysical Studies of 2D-Hole Spectral Characteristics and Peculiarities of Scattering Mechanisms in Ge Layers of Ge-Ge1-Xsix Heterostructures

Orlov LK, Potapov AV, Rubtsova RA, Arapov Y, Gorodilov N, Shelushinina N, Yang FH, Leotin J, Goiran M

The longitudinal effective mass of 2D holes in Ge layers of a Ge-G(1-x)Si(x) multiquantum well structure was measured by different methods including the electrophysical method in strong electric fields, Shubnikov-de-Haas oscillations, and cyclotron resonance. A dependence of the hole effective mass on the hole energy (Fermi levels) is studied. A scattering mechanism providing the existence of localized states between Landau levels is discussed.

Keywords:MAGNETIC-FIELD;GE/GE1-XSIX SUPERLATTICES;MAGNETORESISTANCE;OSCILLATIONS