We report preliminary results of current transient spectroscopy (CTS) investigations performed on a buried strained Si0.85Ge0.15 channel p-MOSFET structure. Measurements give an activation energy E-a = 83 +/- 10 meV. In these structures the fundamental confined level energy E-0 = 69 meV. We propose that the above activation energy corresponds to thermal emission of holes from E-0 since the summation E-a + E-0 = 152 +/- 20 meV is in good agreement with the measured valence band discontinuity (Delta E-v) values reported in the literature.