We have fabricated and characterized thin films of WSiX in order to produce highly resistive films (about 1 k Ohm/sq), with temperature coefficients of resistivity (TCR) less than 0.2%/K, by a technique which, in our experience, is more reproducible, and has better uniformity than comparable techniques involving cermets. Although there are a variety of materials that are capable of producing highly resistive films, these tend to involve very thin films (in the case of metals), reproducibility and uniformity problems (in the case of cermets), or have large TCRs (in the case of semiconductors). We applied a variety of physical vapour deposition techniques for the sputter deposition of films ranging in composition from pure silicon to pure tungsten. In doing so, we have identified a range of compositions and thicknesses in which the TCR and resistivity are independent of thickness, suggesting that these films do not suffer from any significant changes in microstructure at any critical thickness in the range of 70 to 2000 nm. These results were also independent of the type of sputter deposition used. These factors suggest that such films will be useful in the manufacture of stable resistors on the order of 1 k Ohm or more.