The significant finding of this experiment was that annealing improves the quality of PbTiO3 thin film. Moreover, following a short period of annealing, a high-quality perovskite-type PbTiO3 thin film was constructed on a Pt/SiO2/Si (100) substrate at a depositing temperature of 350 degrees C, and supports IC fabrication processes to produce PbTiO3 thin film devices. Under experimental conditions, the annealing process decreased the full width at half maximum (FWHM) of the perovskite phase (111) peak, bringing the 2 theta closer to the standard 2 theta of the PbTiO3 perovskite phase (111) peak defined by the Joint Committee on Powder Diffraction Standards (JCPDS). The experiment herein involved good quality perovskite-phase PbTiO3 thin film on a Pt/SiO2/Si substrate deposited at 350 degrees C and exposure to 5.93 W/cm(2) of RF power, which was then annealed at 700 degrees C for 5 min and then allowed to return to room temperature for more than 15 min. The perovskite structure of the PbTiO3 thin film constructed under the above conditions reached an FWHM (111) peak of 0.259 degrees and a grain size of 341 Angstrom.