A method has been developed to fabricate complex, three-dimensional structures out of polycrystalline SiC. Deep Reactive Ion Etching (DRIE) in conjunction with a novel patterning method has been used to make high precision molds from which SiC atomizers were fabricated. A thin film 3C-SiC interface layer between the Si and the thick SiC deposited into the molds was used to ensure a smooth device surface morphology.