The optical beam induced current(OBIC) analysis of 4H-SiC Schottky rectifiers is presented. Many bright spots in OBIC images are observed beneath Schottky electrodes with high reverse leakage currents more than 10(-5)A/cm(2) at -400V. Forward current density-voltage characteristics are measured, the Schottky rectifiers with high leakage currents show forward excess currents at low voltage level. The excess current is considered to be due to the lower Schottky barrier height at the bright spots of OBIC. It appears that the bright spots of OBIC are not due to the screw dislocations, because the relationship between the bright spots of OBIC and etch pits by molten KOH etching can not be obtained Finally, the origin of the bright spots of OBIC is considered.