The interaction of oxygen with GaN(0001) at room temperature is investigated using low energy electron diffraction (LEED), Auger electron spectroscopy (AES), electron energy loss spectroscopy (ELS), and high resolution electron energy loss spectroscopy (HREELS). Both ELS and HREELS are consistent with reaction of oxygen with surface Ga. LEED shows no surface reconstruction produced by oxygen adsorption. AES reveals a plateau in adsorbed oxygen coverage above similar to 200 L of exposure to molecular oxygen (1 L = 10(-6) Torr*s). However, ELS continues to show changes in surface electronic structure to similar to 1000 L of O-2.