Materials Science Forum, Vol.338-3, 1545-1548, 2000
Observation of cubic GaN/AlN heterointerface formation by RHEED in plasma-assisted molecular beam epitaxy
The formation of cubic GaN on AIN and cubic AlN on GaN heterointerfaces, and their lattice relaxation were observed by in-situ RHEED technique. The behavior of lattice relaxation was found to be different between these two cases, and the critical thickness of the overlayers in these heterostructures was estimated to be around 150 Angstrom, which is quite large compared with the report for corresponding hexagonal crystals.