Ti-B-Al-O thin films were deposited on aluminum substrates by r.f. magnetron sputtering using TiB2-Al2O3 composite targets which were made by self-propagating high temperature synthesis and pressing technology. The effects of power, substrate temperature, and sputtering time on the electrical resistance and the temperature coefficient of resistivity of Ti-B-Al-O thin films were investigated. The effect of annealing of the films on the electrical resistance and the temperature coefficient of resistivity was also studied. Microstructure and composition of the films were examined by a scanning electron microscope and wavelength dispersive spectroscope.