Polycrystalline SiC films were deposited on Si(lll) by reactive DC magnetron sputtering using a four inch elemental silicon target. Composition of the deposited films was studied by AES (auger electron spectroscopy) and RES (Rutherford backscattering spectroscopy) which showed that stoichiometric SiC could be obtained. Both AES depth profile and RES indicated the existence of a transition layer. XRD (X-ray diffraction) analysis revealed the formation of polycrystalline SiC films at a substrate temperature as low as 1123 K, and the absence of other peaks in XRD patterns except the SIC(111) peak implied that the films were (111) oriented. Furthermore, the films were found to consist of columnar nanometer sized crystallites by cross-section TEM (transmission electron microscopy) study.