Titanium carbide (TiC) thin films were grown on Si(100) substrates by a pulsed Nd/YAG laser deposition method. The TiC films were characterized by a glancing-angle X-ray diffraction (GXRD) system and an energy-dispersive X-ray analyzer (EDX). Experimental results suggested that substrate temperature was one of the most important parameters in the fabrication of a crystalline TiC film and that both the GXRD pattern and C/(Ti + C) were changed with methane gas pressure (P-CH4). The conditions required to synthesize a stoichiometric TiC film (Ti/C = 1:1) were P-CH4 approximate to 1 Pa. On the other hand, the conditions required to synthesize a crystallized TiC thin film similar to the target were Ts greater than or equal to 500 degreesC and P-CH4 10 approximate to Pa. It was found that the gas phase reactions between the ablated species and methane gas in the plasma plume influenced the crystalline growth and the compositional ratio of the TiC thin films.