Conductive LaNiO3 (LNO) thin films were grown on Si substrates by metalorganic decomposition (MOD) and their application as the bottom electrodes for the growth of sol-gel derived PbTiO3 (PT) thin films. The structure, morphology and electrical properties of the multilayer films were characterized by some analytical techniques and electrical measurements. PT film on LNO/Si had pure perovskite phase with sharp cross-section and small surface roughness. Most Raman modes of PT films shifted to the low frequency due to the pressure effect in the films. PT capacitor showed saturated hysteresis loop, higher resistivity and breakdown voltage. These results indicated the PT/LNO/Si heterostructure fabricated by sol-gel and MOD techniques to be a promising combination for microelectronic device.