Thin Solid Films, Vol.375, No.1-2, 288-291, 2000
Investigation of crystallographic and pyroelectric properties of lead-based perovskite-type structure ferroelectric thin films
Epitaxially grown and polycrystalline PbTiO3 (PT), (Pb, La)TiO3 (PLT) and Pb(Zr, Ti)O-3 (PZT) thin films with thicknesses from I to 2 mum have been prepared on Pt/Ti/SiO2/Si substrates by means of a sol-gel spin-coating technique. The ferroelectric thin films have good crystallization behavior, excellent dielectric and pyroelectric properties. The pyroelectric coefficients of PT, PLT and PZT thin films are 2.9 x 10(-8) c/cm(2).k, (3.37-5.25)x 10(-8) c/cm(2).k and 6.10 x 10(-8) c/cm(2).k, respectively. The figures of merit for voltage responsivity of PT, PLT and PZT thin films are 0.60 x 10(-10) C cm/J, (0.59-0.78) x 10(-10) C cm/J and 0.63 x 10(-10) C cm/J, respectively. The current responsivity of these films are 9.0 x 10(-9) C cm/J, (10.5-16.0) x 10(-9) C cm/J and 19.1 x 10(-9) C cm/J, and the detectivity are 0.74 x 10(-8) C cm/J, (0.79-1.13)x 10(-8) C cm/J and 0.83 x 10(-8) C cm/J, respectively.
Keywords:ferroelectric thin films;sol-gel technique;crystallographic properties;pyroelectric properties