Using a recently formulated cell model for mass transport with chemical reaction in chemical-mechanical polishing, predictions are made for the rates of chemical removal of copper from blanket films in a hydrogen peroxide solution containing glycine, and compared with experimental observations. The model requires input regarding the kinetics of the reaction, geometrical parameters, and the relative velocity between the wafer and the pad. Predictions of the removal rate as a function of the relative velocity between the wafer and the pad at three different glycine concentrations are found to be consistent with the trend displayed by experimentally measured results from a chemical-mechanical polishing tool.