화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Korean Journal of Chemical Engineering, Vol.19, No.3, 451-462, May, 2002
DOI10.1007/BF02697156  Export Citation
Applications of Atomic Layer Chemical Vapor Deposition for the Processing of Nanolaminate Structures
Kijung Yong, and Joonhee Jeong†
  • Electrical and Computer Engineering Division, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-dong, Nam-gu, Pohang, Kyungbuk 790-784, Korea
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Atomic layer chemical vapor deposition (ALCVD) is a variant of a CVD process that involves surface deposition for the controlled growth of nano-thickness films. ALCVD is based on the self-limiting surface reaction with less than a monolayer chemisorption of chemical precursors. Advantages of the ALCVD process are uniform film growth on large area substrate, easy control of composition in atomic level, low growth temperature, multi-layer thin film growth with various composition, and wide process window. Since initially developed by Suntola in 1977, ALCVD has been used for the growth of various materials, including oxides, nitrides, metals, elements, and compound semiconductors. This article reviews the basic principle, mechanism, characteristics, and applications of ALCVD.
Keywords:Atomic Layer Chemical Vapor Deposition;Self-limiting Chemisorption;Nano-Deposition;Gate Oxide;Capacitor Dielectric Thin Film
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