ZnO thin films doped with either In or Al were electrodeposited potentiostatically at 80 degreesC from aqueous solutions containing Zn(NO3)(2) and either InCl3 or Al(NO3)(3). The films were used for the preparation of pn-junctions based on electrodeposited CuInSe2 thin films. The pn-junctions were prepared both with and without the chemical bath deposited US interlayer, thus demonstrating the possibility to make all-electrodeposited pn-junctions for CuInSe2 thin film solar cells. (C) 2003 Elsevier Science B.V. All rights reserved.