Four-hexagonal polytype films of nanocrystalline silicon carbide (4H-nc-SiC) were deposited by plasma enhanced chemical vapor deposition method with more than 3 x 10(4) W m(-2) threshold of power density, high hydrogen dilution ratio, and bias pretreatment. The source gases were silane, methane and hydrogen. Our work showed that under conditions similar to those used for the growth of muc-SiC-except a higher power densities over a threshold, a bigger bias pretreatment on substrates, and a moderate bias deposition-nc-SiC films could indeed be achieved. The Raman spectra and transmission electron microscopy diffraction patterns demonstrated that the as-grown films from the H-2-CH4-SiH4 plasma consist of amorphous network and phase-pure crystalline silicon carbide which has the 4H polytype structure. The microcolumnar 4H-SiC nanocrystallites of a mean size of approximately 1.6 x 10(-8) in in diameter are encapsulated by amorphous SiC networks. The photoluminescence spectra of 4H-SiC at room temperature, peaking at 8.10 x 10(-7) in using a wavelength of 5.145 x 10(-7) in of argon ion laser, were obtained at room temperature; the luminescence mechanism is thought to be related to transitions in the energy band gap which could be ascribed to the surface states and defects in the structure of 4H-SiC nanocrystalline in these films due to its small size. The as-grown films showed an optical transmittance of 89% at 6.58 x 10(-7) in. This higher transmittance is believed to be from the small size and amorphous matrix. (C) 2003 Elsevier B.V. All rights reserved.