Thin Solid Films, Vol.446, No.1, 106-110, 2004
Dielectric films fabricated in plasma as passivation of 4H-SiC Schottky diodes
In this report, we propose Al2O3, and AlN films as passivation for high-voltage SiC Schottky barrier diodes. A reactive pulse plasma enhanced chemical vapour deposition method is used to form the layers. The comparison between the Schottky barrier diodes with and without passivation shows the effectiveness of Al2O3 layer on the reverse current decrease as a result of the surface states reduction. (C) 2003 Elsevier B.V. All rights reserved.