We studied chemical reactions between ultrathin metal films (Al, Cr, Fe, Mo) and single-crystal oxides (SrTiO3 (100), TiO2 (110)) with X-ray photoelectron spectroscopy (XPS). The work function of the metal and the electron density in the oxide strongly influence the reaction onset temperature (T-RO), where metal oxidation is first observed, and the rate of metal oxidation at the metal/oxide interfaces. The Fermi levels of the two contacting phases affect both the space charges formed at the interfaces and the diffusion of ionic defects across the interfaces. These processes, which determine metal oxidation kinetics at relatively low temperatures, can be understood in the framework of the Cabrera-Mott theory. The results suggest that the interfacial reactivity is tunable by modifying the Fermi level (E-F) of both contacting phases. This effect is of great technological importance for a variety of devices with heterophase boundaries.