We present growth and characterization of Cr- and Mn-doped InN films grown by plasma-assisted molecular beam epitaxy. The films were deposited on c-plane sapphire substrates, employing GaN intermediate layers to accommodate the lattice mismatch between InN and sapphire. Preliminary studies were also made on growth of Cr-doped-InN over (111) GaAs substrates. X-ray diffraction and Hall measurements were used for structural and electrical characterization of the films. The magnetic properties of these materials were measured using superconducting quantum interference device magnetometry. While InN:Mn showed signs of phase segregation and paramagnetism, InN:Cr displayed ferromagnetic properties. (c) 2006 American Vacuum Society.