Multiquantum dot (MQD) layers of CdSe with ZnxCdyMg1-x-ySe barriers have been grown by self-assembly (SA) using molecular beam epitaxy on (001) InP substrates and their optical and structural properties studied by steady state, polarized and power dependence photoluminescence (PL) studies, x-ray diffraction, and atomic force microscopy (AFM). Two sets of MQD structures of CdSe SAQDs were grown with different Mg contents in the ZnxCdyMg1-x-ySe. Uncapped structures were also grown. The control of the electronic coupling of CdSe MQDs has been achieved by varying two parameters: the MgSe. content on the ZnxCdyMg1-x-ySe barrier and the ZnxCdyMg1-x-ySe spacer thickness. Samples with properties intermediate between those of totally coupled MQDs and uncoupled ones were also grown. Results show that for the edge emission, polarization is mostly TM for the case of coupled QDs, indicating an excitonic delocalization along the growth axis, and TE polarized for the uncoupled QDs. For the surface configuration, the PL emission was slightly TM polarized for the uncoupled case, suggesting a surface organization. AFM images of an uncapped sample grown under the same conditions than the capped one confirmed the formation of connected structures (wirelike rather than dotlike) in the surface. No surface organization was obtained for the coupled case. (c) 2006 American Vacuum Society.