A polycrystalline Cr-doped SrZrO3/SrRuO3 layered structure showing a reproducible resistive switching behavior with a resistive switching voltage of +/- 2.5 V was successfully fabricated on commercial Si (100) substrate by off-axis rf sputtering. Typical resistance values of high-and low-resistance states were about 100 and 5 k Omega, respectively, so that the ratio of high- to low-resistance value is about 20. These values are appropriate for memory applications, and the resistive switching voltage of +/- 2.5 V is the lowest value among the switching voltages of Cr-doped SrZrO3 films on Si substrates reported in recent literature. We suggest that the low-voltage resistive switching of the polycrystalline Cr-doped SrZrO3 thin film is attributed to the reduction of resputtering effects and the formation of a clean interface between the Cr-doped SrZrO3 thin film and the SrRuO3 bottom electrode layer by the use of 90 degrees off-axis sputtering. (c) 2006 American Vacuum Society.