A successive ionic layer adsorption and reaction (SU;AR) method which is a simple and versatile for yielding good quality Bi2Se3 films of thickness upto similar to 1.2 mu m under a choice of deposition conditions is presented. The films were deposited onto glass and single crystalline wafer of Si (1 1 1). The structural, optical and electrical properties were studied. The thin films were smooth and homogeneous. The films annealed at 473 K in air for 1 h, did not show significant change in crystallinity and optical bandgap.