The current status of the mathematical model for heat and mass transfer during SiC bulk crystal growth from the vapor phase in inductively heated reactors is reviewed. Results on the simulation of thermoelastic stresses during the growth process are presented. Stresses have been analyzed to exceed considerably the critical resolved sheer stress sigma (CRS) = 1 MPa which is generally assumed to be the indicator for the onset of dislocation formation in SIC. It is shown that the conditions for stress formation at fixed positions in the crystal vary considerably during growth and that geometric modifications can contribute significantly to a reduction of the stress level. The possible impact of semitransparency of SiC on additional stress generation is discussed. As effective tool for process control and optimization an inverse modeling procedure is introduced.