The structures of low-divergence 980 nm semiconductor lasers grown by molecular beam epitaxy are presented. The high-power, lower-beam-divergence laser consists of an array of closely spaced, tapered waveguides and nonabsorbing facets. The emission wavelength is 982 nm. The FWHM of the far-field pattern is 10 x 28 degrees. Continuous-wave output power of 5.1 W has been achieved.