Journal of Crystal Growth, Vol.255, No.3-4, 348-352, 2003
Growth and optical properties single of Eu3+ -doped La3Ga5SiO14 single crystal
Europium-doped La3Ga5SiO14 single crystals have been grown along c-axis by using the Czochralski method. The structure of the crystal has been studied by X-ray powder diffraction (XRPD) method. The segregation coefficients of Eu3+ in La3Ga5SiO14 crystal-were measured by,X-ray fluorescence analysis (XRF). For the 1 mol% doping level in the melt, the distribution coefficient of Eu3+ was determined to be 0.558 at%. Transmittance spectrum were carried out in the range of 190-3200 nm at room temperature. The fluorescence properties were investigated. (C) 2003 Elsevier Science B.V. All rights reserved.
Keywords:X-ray diffraction;Czochralski method;gallium compounds;piezoelectric materials;solid-state lasers