Magnesium-doped zinc silicate (Mn: Zn2SiO4) Was prepared on oxidized silicon wafer using a simple sol-gel process. it is found from both XRD and UV-visible absorption experiment that when the process temperature was above 880degreesC, zinc silicate was formed on the silicon wafer, while when the temperature was below 880degreesC, zinc oxide was formed. The size of Mn: Zn2SiO4 grain in the film was about 100nm as determined by scanning force microscope. The photoluminescence (PL) spectrum showed that the peak wavelength of the green emission was at 525 nm. PL decay measurement showed a lifetime of about 21 ms, indicating possible application of this film in silicon-based displays. (C) 2003 Elsevier Science B.V. All rights reserved.