We report synthesis of wurtzite structured gallium nitride nanowires via a chemical vapor deposition of gallium, gallium nitride, and boron oxide mixture under ammonia atmosphere. All nanowires exhibit the same [001] growth direction. The majority of nanowires are extremely thin and long; the diameter is 5-10 nm and the length is 40-50 mum. The larger diameter nanowires exhibit a zigzag configuration with amorphous boron outerlayers. X-ray diffraction and Raman spectroscopy reveal no significant strains inside the nanowires. (C) 2003 Elsevier B.V. All rights reserved.